AO4406 11.5A 30v贴片mos管 N沟道场效应管

General Description Product Summary

VDS

ID (at VGS=10V) 13A

RDS(ON) (at VGS=10V) < 11.5mΩ

RDS(ON) (at VGS = 4.5V) < 15.5mΩ

100% UIS Tested

100% Rg

Tested

Symbol

VDS

The AO4406A uses advanced trench technology to

provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and

general purpose application

Absolute Maximum Ratings TA=25°C unless otherwise noted

30V

Drain-Source Voltage 30

G

D

S

SOIC-8

Top View Bottom View

D

D

D

D

S

S

S

G

VDS

VGS

IDM

IAS

EAS

TJ

, TSTG

Symbol

t ≤ 10s

Steady-State

Maximum Junction-to-Lead Steady-State RθJL °C/W

Maximum Junction-to-Ambient °C/W A D

16

75

24

TA=25°C

TA=70°C

Power Dissipation B

PD

Avalanche energy L=0.1mH C

Pulsed Drain Current C

Continuous Drain

Current

TA=25°C

V

Maximum Junction-to-Ambient A

Gate-Source Voltage ±20 V

Drain-Source Voltage 30

mJ

Avalanche Current C

24

22 A

A

ID

13

10.4

100

°C/W RθJA

31

59

40

Thermal Characteristics

W

3.1

Parameter Typ Max Units

TA=70°C 2

Junction and Storage Tempera