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H1061
? PMC Components Pte Ltd. , Singapore, 2000
TRIPLE DIFFUSED SILICON NPN TRANSISTOR
… designed for low frequency power amplifier
MAXIMUM RATINGS
Characteristic Symbol Value Unit
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 80 V
Emitter Base Voltage VEBO 5 V
Collector Current (DC) IC 4 A
Collector Current (Peak) IC 8 A
Collector power Dissipation PC 40 W
Junction Temperature TJ 150 °C
Storage Temperature Tstg -55~150 °C
ELE*RICAL CHARA*ERISTICS
Characteristic Symbol Test Condition Min. T*. Max. Unit
Collector Cut Off Current ICBO VCB = 80V, IE = 0A - - 100 μA
Collector – Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0A 80 - - V
DC Current Gain hFE VCE = 4V, IC = 1A
VCE = 4V, IC = 0.1A
60
35
-
-
200
-
-
-
Collector Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 0.2A - - 1 V
Base Emitter Voltage VBE VCE = 4V, IC = 1A - - 1.5 V
Transition Frequency fT VCE = 5V, IC = 0.5A - 10 - MHz
Collector Out put Capacitance Cob VCB = 20V, IE = 0A, f=1MHz - 40 - P
Cl*ification of hFE
Rank B C
Range 60 to 120 100-200
日立.*童.PMC
H1061
*缘栅(MOSFET)
N沟道
增强型
UNI/一般用途
P-DIT/塑料双列直插
N-FET硅N沟道
`(V)
`(V)
40(pF)
`(dB)
`(mA)
`(mW)