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强势代理FQPF5N60C 场效应管 TO-220F封装
广泛应用于:风扇控制板,控制电源,LED驱动电源,路灯电源,灯杯电源,LCD电源、机箱电源、逆变器
诚征分销商.
规格书:
https://www.hbic.cn/aoke/down/fqpf5n60c.pdf
600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2?@VGS=10V
■ Low gate charge
■ Low Crss (t*ical 14pF)
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOS ET is usually used at AC F
adaptors, on the battery charger and SMPS
AOKE
FQPF5N60C
*缘栅(MOSFET)
N沟道
增强型
NF/音频(低频)
CER-DIP/陶瓷直插
N-FET硅N沟道
1(V)
1(V)
1(μS)
1(pF)
1(dB)
1(mA)
1(mW)