100%原装现货 FQPF10N20C FQPF10N20

FQPF10N20C,TO-220F,DIP/MOS,N场,200V,9.5A,0.36Ω

描述:FQPF10N20C,TO-220F,DIP/MOS,N场,200V,9.5A,0.36Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced

using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for

high efficiency switching DC/DC converters,switch mode power supplies, DC-AC

converters for uninterrupted power supplies and motor controls.

特点：
 * 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
 * Low gate charge ( typical 20 nC)
 * Low Crss ( typical 40.5 pF)
 * Fast switching
 * 100% avalanche tested
 * Improved dv/dt capability