场效应管 KIA13N50 HF,MDP13N50 TH,13N50

MDP13N50TH，TO-220，MagnaChip/美格纳，DIP/MOS，N场，600V，13A，0.5Ω

1 . Description
 
The KIA13N50H N-Channel  enhancement mode  silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology 
 
2 .   Features 
 
   RDS(on)=0.48? @ VGS=10V 
   Low gate charge ( typical 43nC)  
   Fast switching capability
   Avalanche energy specified
   Improved dv/dt capability