场效应管 MDI5N50TH MDI5N50

MDI5N50TH，TO-251，MagnaChip/美格纳，DIP/MOS，N场，500V，4.4A，1.4Ω

General Description

The MDI5N50 uses advanced MagnaChip’s
MOSFET technology, which provides low on state
resistance, high switching performance and
excellent quality.

MDI5N50 is suitable device for SMPS, HID and
general purpose applications.

Features

VDS=500V ID=4.4A   @VGS = 10V
RDS(ON) ≤ 1.4 @VGS = 10V

Applications
Power Supply
PFC
Ballast