场效应管 SPU01N60S5 01N60S5
地区:广东 深圳
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SPU01N60S5,MOS,600V,0.8A,6Ω,251
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Cool MOS™ Power Transistor
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme d v /d t rated
• Optimized capacitances
• Improved noise immunity
• Former development designation:
INFINEON/英飞凌
SPU01N60S5,MOS,600V,0.8A,6Ω,251
绝缘栅(MOSFET)
N沟道
增强型
P-DIT/塑料双列直插
N-FET硅N沟道
20
3.7
0.8A