供应N沟 MOSFET 2N60 TO-252

2 Amps,600 Volts
N-CHANNEL MOSFET
D*CRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATUR*
* RDS(ON) =3.8Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 9.0nC)
* Low reverse transfer capacitance (Crss = t*ical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness