IS61NLP25618A-200TQLI

IS61NLP25618A-200TQLI  专营ISSI进口原装正品假一赔十，欢迎联系QQ2851185157

The 4 Meg 'NLP/NVP' product family feature high-speed,

low-power synchronous static RAMs designed to provide

a burstable, high-performance, 'no wait' state, device for

networking and communications applications. They are

organized as 128K words by 32 bits, 128K words by 36

bits, and 256K words by 18 bits, fabricated with ISSI's

advanced CMOS technology.

Incorporating a 'no wait' state feature, wait cycles are

eliminated when the bus switches from read to write, or

write to read. This device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit.

All synchronous inputs pass through registers are controlled

by a positive-edge-triggered single clock input.Operations

may be suspended and all synchronous inputs ignored

when Clock Enable, CKE is HIGH.In this state the internal

device will hold their previous values.

AllRead,WriteandDeselect cyclesareinitiatedby theADV

input. When the ADV is HIGH the internal burst counter

is incremented. New external addresses can be loaded

when ADV is LOW.

Write cycles are internally self-timed and are initiated

by the rising edge of the clock inputs and when WE is

LOW. Separate byte enables allow individual bytes to be

written.

A burst mode pin (MODE) defines the order of the burst

sequence.WhentiedHIGH,theinterleavedburst sequence

is selected. When tied LOW, the linear burst sequence is

selected.