现货**MOS NCE40H19

D*CRIPTION
The NCE40H19 uses advanced trench technology an
design to provide excellent R
with low gate charge.
DS(ON)
can be used in a wide variety of applications.
 
GENERAL FEATUR*  V  =40V,I  =190A
DS D
 < 3.5m @ V =10V 
R
DS(ON) GS
  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Good stability and uniformity with high E
AS  Excellent package for good heat dissipation  Special process technology for high *D capability
 
Application  Power switching application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply