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D*CRIPTION
The NCE0128D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATUR*
● V = 100V,I =28A
RDS(ON) < 18m? @ VGS=10V (T*:14 m?)
● Special process technology for high *D capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
"NCE(新洁能)
NCE0128D
*缘栅(MOSFET)
N沟道
增强型
S/开关
SMD(SO)/表面封装
N-FET硅N沟道