图文详情
产品属性
相关推荐
ST*原装场效应三*管系列 STB21NM60ND B21NM60ND
ST*原装场效应三*管系列 STB21NM60ND B21NM60ND
STB21NM60ND B21NM60ND产品规格 参数
Datasheets STX21NM60ND
Product Photos D2PAK, TO-263
Catalog Drawings ST Series D2PAK
Standard Package 1,000
Category Discrete Semiconductor Products
Family FETs - Single
Series FDmesh™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 17A
Rds On (Max) @ Id, Vgs 220 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 50V
Power - Max 140W
Mounting T*e Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Supplier Device Package D2PAK
Packaging Tape & Reel (TR)
Catalog Page 1321 (US2011 Interactive)
1321 (US2011 PDF)
Other Names 497-8471-2
ST/意法
STB21NM60ND B21NM60ND
*缘栅(MOSFET)
N沟道
增强型
MOS-TPBM/三相桥
LLCC/无引线陶瓷片载
*肖特基势垒栅
33(V)
33(V)
33(μS)
33(pF)
3(dB)
33(mA)
3(mW)