IRFB20N50KPBF FB20N50K TO-220AB 原装 代理IR品牌 20A 500V
地区：广东 深圳
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Technical/Catalog Information | IRFB20N50KPBF |
| Vendor | Vishay/Siliconix |
| Category | Discrete Semiconductor Products |
| Mounting T*e | Through Hole |
| FET T*e | MOSFET N-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2870pF @ 25V |
| Power - Max | 280W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB20N50KPBF IRFB20N50KPBF |
| Technical/Catalog Information | IRFB20N50KPBF |
| Vendor | Vishay/Siliconix |
| Category | Discrete Semiconductor Products |
| Mounting T*e | Through Hole |
| FET T*e | MOSFET N-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2870pF @ 25V |
| Power - Max | 280W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB20N50KPBF IRFB20N50KPBF |
IRFB20N50KPBF IRFB20N50KPBF IRFB20N50KPBF FB20N50K
IR/国际整流器
IRFB20N50KPBF
*缘栅(MOSFET)
N沟道
耗尽型
GEP/互补类型
CER-DIP/陶瓷直插
GE-N-FET锗N沟道
500（V）
500（V）
50（μS）
1（pF）
01（dB）
01（mA）
010（mW）
