新款SFT1342-TL-E 贴片TO-252

Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID= –1mA, VGS=0V –60 V Zero-Gate Voltage Drain Current IDSS VDS= –60V, VGS=0V –1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS= –10V, ID= –1mA –1.2 –2.6 V Forward Transconductance gFS VDS= –10V, ID= –6A 11 S Static Drain to Source On-State Resistance RDS(on)1 ID= –6A, VGS= –10V 47 62 mΩ RDS(on)2 ID= –6A, VGS= –4.5V 62 87 mΩ RDS(on)3 ID= –6A, VGS= –4V 68 96 mΩ Input Capacitance Ciss VDS= –20V, f=1MHz 1150 pF Output Capacitance Coss 115 pF Reverse Transfer Capacitance Crss 95 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 135 ns Fall Time tf 75 ns Total Gate Charge Qg VDS= –30V, VGS= –10V, ID= –12A 26 nC Gate to Source Charge Qgs 3.5 nC Gate to Drain “Miller” Charge Qgd 5 nC Forward Diode Voltage VSD IS= –12A, VGS=0V –0.95 –1.2 V