AT2300GD

PRODUCT SUMMARY
VDSS ID RDS(on) (m-ohm)Max
20V
5.4 30 @ VGS= 4.5V
4.3 46 @ VGS= 2.5V
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 12 V
Drain Current-Continuousa@ TA= 25 °C
b
ID 5.4 A
IDM 21.5 A
a
Drain-Source Diode Forward Current IS 1.7 A
Maximum Power Dissipation
a TA=25°C
PD
1.25
W
TA=75°C 0.75
Operating Junction and Storage
Temperature Range
TJ,TSTG - 55 to 150 °C
Aonetek Semiconductor CO.,LTD
N-Channel High Density Trench MOSFET
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.