MOS场效应管WPM2341A-3/TR芯瑞SReleics通信保护芯片SOT-23-3L贴片

  WPM2341A-3/TR  牌子：芯瑞SReleics 台湾产地 封装贴片：SOT-23-3L 年份：2020年  包装：一盘3000个

 Power Dissipation Characteristics 1. The package of WPM2341A is SOT23-3, surface mounted on FR4 Board using 1 in sq pad sizeˈ 2 oz CuˈR șJA is 125 ć/W. 2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R șJA* PD , the maximum power dissipation is determined by R șJA . 3. The RșJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller RșJA and result in larger maximum power dissipation.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 V Continuous Drain Current TA (TJ = 150 °C)a TA=80°C ID Pulsed Drain Current IDM -20 Continuous Source Current (Diode Conduction) a IS A Maximum Power TA=25°C 1.25 0.75 Dissipation a TA=80°C PD W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

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