英国ICEMOS公司SOI硅片

Superjunction MOSFET英国进口

北京特博万德科技有限公司独家代理英国ICEMOSTECH的高品质SOI wafer和 SuperJunction MOSFET。

SOI wafer尺寸: 4”(100mm）,5”（125mm）,6”（150mm） and  8"（200mm）

SOI Spec. 规格：

     1-    Bonded SOI wafer (绝缘硅上键合硅片）

                          For4”(100mm）,5”（125mm）,6”（150mm）

                     ---- Handle wafer minimum 300um maximum 1000um,

                     ---- Buried Oxide, minimum 0.1 um, maximum 4 um,

                     ---- Device layer minimum 2 um, max 500 um.

                          For 8"（200mm）

                     ---- Handle thickness minimum 500um and maximum 675um,

                     ---- Buried Oxide minimum 0.1 um, maximum 4 um,

                     ---- Device layer minimum 5 um, maximum 500 um.

2-       Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片

     100mm,125mm,150mmand200mm, thickness as specified above.

3-       Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),

      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)

      and finally Through Silicon Via (TSV)   

 ----  Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer

 ---- Multiple SOI 2 or 3 or more layers of SOI designed around your process

 ---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated

     4-     SOI + Trench & Refill

 Features

• Significant die shrink compared to conventional dielectric isolation

     (DI) or junction isolation

• Bulk quality top silicon layer
• Total device-to-device isolation
• Lower substrate capacitance than bulk
• Fully flexible specification on SOI, Trench and refill parameters

5-   Superjunction MOSFET

为了一些客户的紧急需求，英国工厂存有部分现货！

欢迎您来电咨询更详细的产品信息！