93LC86CT-I/SN 电可擦除可编程只读存储器

93LC86CT-I/SN

电可擦除可编程只读存储器 1024x16-2048x8 2.5V IND TEMP, SOIC8

16K Microwire Compatible Serial EEPROM

Description  93LC86CT-I/SN

The Microchip Technology Inc. 93XX86A/B/C devices  are 16K bit low-voltage serial Electrically Erasable  PROMs (EEPROM). Word-selectable devices such as  the 93XX86C are dependent upon external logic  levels driving the ORG pin to set word size. For  dedicated 8-bit communication, the 93XX86A devices  are available, while the 93XX86B devices provide  dedicated 16-bit communication, available on SOT-23  devices only. A Program Enable (PE) pin allows the  user to write-protect the entire memory array.  Advanced CMOS technology makes these devices  ideal for low-power, nonvolatile memory applications.  The entire 93XX Series is available in standard packages  including 8-lead PDIP and SOIC, and advanced  packaging including 8-lead MSOP, 6-lead SOT-23,  and 8-lead TSSOP. Pb-free (Pure Matte Sn) finish is  also available.

Absolute Maximum Ratings (†) 93LC86CT-I/SN  

VCC..........................................7.0V  

All inputs and outputs w.r.t. VSS .................................... -0.6V to VCC +1.0V  

Storage temperature .........................................-65°C to +150°C  

Ambient temperature with power applied....................................-40°C to +125°C  

ESD protection on all pins .......................................≥ 4 kV

Features 93LC86CT-I/SN

• Low-power CMOS technology

• ORG pin to select word size for ‘86C’ version

• 2048 x 8-bit organization ‘A’ devices (no ORG)

• 1024 x 16-bit organization ‘B’ devices (no ORG)

• Program Enable pin to write-protect the entire array

• Self-timed ERASE/WRITE cycles (including auto-erase)

• Automatic ERAL before WRAL

• Power-on/off data protection circuitry

• Industry standard 3-wire serial I/O

• Device Status signal (READY/BUSY)

• Sequential READ function

• 1,000,000 E/W cycles

• Data retention > 200 years

• Temperature ranges supported:

- Industrial (I) -40°C to +85°C

- Automotive (E) -40°C to +125°C