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HMC536LP2ETR
RF 开关 IC 3W SPDT T/R Switch SMT, DC - 6 GHz
GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz
General Description
The HMC536MS8G & HMC536MS8GE are DC to
6 GHz GaAs MMIC T/R switches in 8 lead MSOP8G
surface mount packages with an exposed ground
paddle. The switch is ideal for cellular/PCS/3G
basestation applications featuring low 0.5 dB insertion
loss and +55 dBm input IP3. Power handling is
excellent up through 6 GHz with the switch offering
a P0.1dB compression point of +29 dBm at +3 volts
control. On-chip circuitry allows positive voltage control
of 0/+3 volts or 0/+5 volts at very low DC currents.
Features HMC536LP2ETR
Input P0.1dB: +34 dBm @ +5V
Insertion Loss: 0.5 dB
Positive Control: +3V or +5V
MS8G SMT Package, 14.8 mm2
Isolation: 27 dB
Very Fast Switching Speed
Included in the HMC-DK005 Designer’s Kit
Typical Applications HMC536LP2ETR
The HMC536MS8G / HMC536MS8GE is ideal for:
• Cellular/PCS/3G Infrastructure
• ISM/MMDS/WiMAX
• CATV/CMTS
• Test Instrumentation
型号: HMC536LP2ETR
制造商: Analog Devices Inc.产品种类: RF 开关 IC
RoHS: 无铅环保
开关数量: Dual
开关配置: SPDT
工作频率: DC to 6 GHz
介入损耗: 0.6 dB
关闭隔离—典型值: 27 dB
最大工作温度: + 85 C
安装风格: SMD/SMT
封装 / 箱体: DFN-6
封装: Cut Tape
封装: Reel
系列: HMC536
技术: GaAs
商标: Analog Devices / Hittite
最小工作温度: - 40 C
Pd-功率耗散: 0.86 W
产品类型: RF Switch ICs
工厂包装数量: 500
子类别: Wireless & RF Integrated Circuits
单位重量: 21.100 mg
: RF Switch ICs
: 0.86 W
: 0.6 dB
: DC to 6 GHz
: 27 dB
: Dual