HMC407MS8GETR 射频放大器

HMC407MS8GETR

射频放大器 InGaP HBT pow amp SMT, 5 - 7 GHz

GaAs InGaP HBT MMIC  POWER AMPLIFIER, 5 - 7 GHz

General Description HMC407MS8GETR

The HMC407MS8G & HMC407MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC Power amplifi ers which

operate between 5 and 7 GHz. The amplifi er requires

no external matching to achieve operation and is

thus truly 50 Ohm matched at input and output. The

amplifi er is packaged in a low cost, surface mount

8 leaded package with an exposed base for improved

RF and thermal performance. The amplifi er

provides 15 dB of gain, +29 dBm of saturated power

at 28% PAE from a +5V supply voltage. Power down

capability is available to conserve current consumption

when the amplifi er is not in use.

Typical Applications HMC407MS8GETR

This amplifi er is ideal for use as a power

amplifi er for 5 - 7 GHz applications:

• UNII

• HiperLAN

Features HMC407MS8GETR

Gain: 15 dB

Saturated Power: +29 dBm

28% PAE

Supply Voltage: +5V

Power Down Capability

No External Matching Required

Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V

Parameter Min. Typ. Max. Min. Typ. Max. Units

Frequency Range 5 - 7 5.6 - 6.0 GHz

Gain 10 15 18 12 15 18 dB

Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C

Input Return Loss 12 12 dB

Output Return Loss 15 15 dB

Output Power for 1 dB Compression (P1dB) 21 25 22 25 dBm

Saturated Output Power (Psat) 29 29 dBm

Output Third Order Intercept (IP3) 32 37 36 40 dBm

Noise Figure 5.5 5.5 dB

Supply Current (Icq) Vpd = 0V/5V 0.002 / 230 0.002 / 230 mA

Control Current (Ipd) Vpd = 5V 7 7 mA

Switching Speed tON, tOFF 30 30 ns