A2I20D040GNR1 射频放大器 NXP

A2I20D040GNR1

射频放大器 Airfast RF LDMOS Wideband Integrated Power Amplifier, 1400-2200 MHz, 5.0 W Avg., 28 V

RF LDMOS Wideband Integrated Power Amplifiers

The A2I20D040GNR1 wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi --stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

Features A2I20D040GNR1

 Extremely Wide RF Bandwidth

 RF Decoupled Drain Pins Reduce Overall Board Space

 On--Chip Matching (50 Ohm Input, DC Blocked)

 Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)

型号: A2I20D040GNR1

制造商: NXP 

产品种类: 射频放大器 

安装风格: SMD/SMT 

封装 / 箱体: TO-270WBG-17 

类型: RF LDMOS Wideband Integrated Power Amplifier 

工作频率: 1.4 GHz to 2.2 GHz 

P1dB - 压缩点: 45.6 dBm 

增益: 32.1 dB 

工作电源电压: 28 V 

测试频率: 1.9 GHz 

工作电源电流: 220 mA 

最小工作温度: - 40 ℃ 

最大工作温度: + 150 ℃ 

封装: Cut Tape 

封装: Reel 

商标: NXP / Freescale  

通道数量: 2 Channel  

产品类型: RF Amplifier  

工厂包装数量: 500  

子类别: Wireless & RF Integrated Circuits  

单位重量: 598.100 mg