供应IRF640NPBF原装Infineon(英飞凌)

产品型号：IRF640NPBF

• 品牌： Infineon(英飞凌)
• 封装： TO-220(TO-220-3)
• 描述：类型：N沟道 漏源电压(Vdss)：200V 连续漏极电流(Id)：18A 功率(Pd)：150W 导通电阻(RDS(on)@Vgs,Id)：150mΩ@10V,11A 阈值电压(Vgs(th)@Id)：4V@250uA N沟道,200V,18A,150mΩ@10V

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.

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