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产品型号:
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品牌: Infineon(英飞凌)
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封装: TO-252-2(DPAK)
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描述:类型:N沟道 漏源电压(Vdss):55V 连续漏极电流(Id):42A 功率(Pd):110W 导通电阻(RDS(on)@Vgs,Id):27mΩ@10V,25A 阈值电压(Vgs(th)@Id):2V@250uA N沟道,55V,42A,27mΩ@10V
品 牌: Infineon(英飞凌)
厂家型号: IRLR2905TRPBF
商品编号: C3010
封装: TO-252-2(DPAK)
商品毛重: 5.49克(g)
包装方式: 编带
IRLR2905TRPBF IRLR2905TRPBF IRLR2905TRPBF
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.