供应贴片三极管 8050 SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter  Symbol Test      conditions  MIN  MAX  UNIT

Collector-base breakdown voltage    VCBO  IC= 10μA, IE   V     0 6   0 =

Collector-emitter breakdown voltage  VCEO  IC= 1mA, IB   V     0 4   0 =

Emitter-base breakdown voltage  VEBO  IE=10μA, IC   V     6   0 =

Collector cut-off    current  ICBO  VCB=60V, IE     1 . 0     0 = μA

Collector cut-off    current  ICEX  VCE=30V,VBE(off)=3V    50    nA

Emitter cut-off   current  IEBO  VEB=5V, IC     1 . 0     0 = μA

hFE(1)  VCE=1V, IC=10mA  100  400  

hFE(2)  VCE=1V, IC= 50mA  60      DC current gain

hFE(3)  VCE=1V, IC= 100mA  30    

Collector-emitter saturation voltage  VCE(sat)  IC=50mA, IB= 5mA    0.3  V

Base-emitter saturation voltage  VBE(sat)  IC= 50mA, IB= 5mA    0.95  V

Transition frequency  fT  VCE=20V, IC=10mA,f=100MHz  300    MHz

Delay Time  td    35  nS

Rise Time  tr

VCC=3V,VBE=-0.5V

IC=10mA, IB1=-IB2=1.0mA    35  nS

Storage Time  ts    200  nS

Fall Time  tf

VCC=3V,IC=10mA,

IB1=-IB2=1mA    50  nS