NT5CC128M16IP-DI 全新原装 DDR3

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NT5CC128M16IP-DI  全新原装 DDR3

Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM

 

NT5CC128M16IP-DI  全新原装 DDR3 的描述:

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It isinternally configured as an eight bank DRAMs.

 

The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. Thesesynchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for generalapplications.

 

The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and addressinputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK  falling).

 

 All I/Os are synchronized with a single ended DQS ordifferential DQS pair in a source synchronous fashion.These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available inBGA packages.

 

 

NT5CC128M16IP-DI  全新原装 DDR3 的参数:

产品分类

DRAM 动态随机存储器

封装/外壳

BGA96_8X13MM

时钟频率(Max

800MHz

存储器类型

易失

存储容量

2Gb

工作电压(范围)

1.35V

接口类型

并联

工作温度

0℃ to +95

安装类型

SMT

存取时间

160ns

原始制造商

Nanya Technology

RoHS

x/尺寸

13.00 x 8.00mm

高度

1.00mm

存储温度

-55 to +150

 

 

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全新原包原装可含税(香港可交)

型号

NT5CC128M16IP-DI

制造商

NANYA/南亚

封装

FBGA

批次

23+

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