MT29F1G08ABAEAWP-IT:E 原装 NAND FLASH

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#.

Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal.

MT29F1G08ABAEAWP-IT:E 原装 NAND FLASH 的技术参数：

制造商	MICRON
存储器类型	非易失
存储器格式	闪存
技术	闪存-NAND
存储容量	1Gb（128M x 8）
存储器接口	并联
访问时间	-
写周期时间 - 字，页	-
电压 - 供电	2.7V ~ 3.6V
工作温度	-40°C ~ 85°C（TA）
包装量	960
安装类型	表面贴装型
封装/箱体	48-TSOP（0.724"，18.40mm 宽）

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MT52L512M32D2PF-107WT:B	MICRON/镁光
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MT41K64M16TW-107IT:J	MICRON/镁光
MT41K512M8DA-107:P	MICRON/镁光
MT41K256M16TW-107:P	MICRON/镁光
MT41K256M16TW-107IT:P	MICRON/镁光
MT41K256M16TW-107AIT:P	MICRON/镁光
MT41K128M16JT-125:K	MICRON/镁光
MT41K128M16JT-125IT:K	MICRON/镁光
MT40A512M16LY-075:E	MICRON/镁光
MT29F64G08CBABBWPR:B	MICRON/镁光
MT29F4G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAGAWP-IT:G	MICRON/镁光
MT29F2G08ABAEAWP-IT:E	MICRON/镁光
MT29F2G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAEAH4:E	MICRON/镁光
MT29F2G01ABAGDWB-IT:G	MICRON/镁光
MT53D512M64D4HR-053 WT:D	MICRON/镁光

型号

MT29F1G08ABAEAWP-IT:E

制造商

MICRON/镁光

封装

TSOP

批次

21+/22+