MT28EW512ABA1LJS-0SIT TR 原装 NOR FLASH

The device is an asynchronous, uniform block, parallel NOR Flash memory device.

READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode.

The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.

制造商	MICRON
包装	卷带（TR）
存储器类型	非易失
存储器格式	闪存
技术	FLASH - NOR
存储容量	512Mb（64M x 8，32M x 16）
存储器接口	并联
访问时间	95ns
写周期时间 - 字，页	60 ns
电压 - 供电	2.7V ~ 3.6V
工作温度	-40°C ~ 85°C（TA）
安装类型	表面贴装型
封装/箱体	56-TFSOP（14 *20）
基本产品编号	MT28EW512

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型号

MT28EW512ABA1LJS-0SIT TR

制造商

MICRON/镁光

封装

TSOP

批次

21+/22+