供应K9F2G08U0D-SIB0 原装 NAND FLASH

K9F2G08U0D-SIB0 原装 NAND FLASH

2Gb D-die NAND Flash  Single-Level-Cell (1bit/cell)

K9F2G08U0D-SIB0 原装 NAND FLASH 的描述

Offered in 256Mx8bit, the K9F2G08U0D is a 2G-bit NAND Flash Memory with spare 64M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400ms on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

The K9F2G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F2G08U0D-SIB0 原装 NAND FLASH 的特征：

 Voltage Supply

 - VCC : 3.3V(2.7V ~ 3.6V)

· Organization

 - Memory Cell Array : (512M + 16M) x 8bit

 - Page Size : (2K + 64)Byte

 - Data Register : (2K + 64) x 8bit

 - Block Size : (128K+4K) Byte

· Automatic Program and Erase

 - Page Program : (2K + 64)Byte

 - Block Erase : (128K + 4K)Byte

· Page Read Operation

 - Random Read : 25ms(Max.)

 - Serial Access : 25ns(Min.)

 - Data Transfer Rate : SDR 20Mhz(40Mbps)

· Fast Write Cycle Time

 - Page Program time : 400ms(Typ.)

 - Block Erase Time : 4.5ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

 - Program/Erase Lockout During Power Transitions

· Command Register Operation

· Unique ID for Copyright Protection

· Package :

 - K9F2G08U0D-Sx1)B0 : Pb-Free, Halogen-Free Package

 48 - Pin TSOP1 (12 x 20/0.5 mm pitch)

 - K9F2G08U0D-5x1)B0 : Pb-Free, Halogen-Free Package

 63 - FBGA (9 x 11 / 0.8 mm pitch)