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原装 TC58CVG2S0HRAIJ NAND FLASH
FLASH - NAND(SLC) 存储器 IC 4Gb(512M x 8) SPI 133 MHz 300 μs 8-WSON(6x8)
原装 TC58CVG2S0HRAIJ NAND FLASH 的技术参数:
制造商: |
Kioxia |
产品种类: |
NAND闪存 |
RoHS: |
是 |
安装风格: |
SMD/SMT |
封装 / 箱体: |
WSON-8 |
存储容量: |
4 Gbit |
接口类型: |
Serial |
组织: |
512 M x 8 |
数据总线宽度: |
8 bit |
电源电压: |
2.7 V to 3.6 V |
电源电流(max): |
24 mA |
工作温度: |
- 40 C to + 85 C |
封装: |
Tray |
商标: |
Kioxia America |
(MAX)时钟频率: |
133 MHz |
湿度敏感性: |
Yes |
产品类型: |
NAND Flash |
速度: |
300 us |
工厂包装数量: |
480 |
子类别: |
Memory & Data Storage |
The TC58CVG2S0HRAIJ is a Serial Interface NAND Flash memory for embedded applications which supports the SPI interface. The TC58CVG2S0HRAIJ is organized as (4096 + 128) bytes × 64 pages × 2048 blocks.
The device has a 4224 byte data buffer which allows program and read data to be transferred between the buffer and the memory cell array in 4224-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The device has the high speed mode for sequential Page Read operation. When high speed mode is enabled, the average of tR is shortened.
The TC58CVG2S0HRAIJ has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be corrected. The details of the internal ECC function is shown in 4.15. Internal ECC.
TC58CVG2S0HRAIJ
TOSHIBA /KIOXIA东芝,铠侠
WSON-8
22+
无铅/环保
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