供应K9F1G08U0C 原装 NAND FLASH

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K9F1G08U0C  原装 NAND FLASH

K9F1G08U0C  原装 NAND FLASH 的技术参数:

容量

1G-bit

工作电压

3.3V

结构

(128M + 4M) x 8bit

 封装与引脚

TSOP48

 

K9F1G08U0C  原装 NAND FLASH 概述

The K9F1G08X0C is a 128Mx8bit (1G-bit) NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.

 

K9F1G08U0C  原装 NAND FLASH 的特征:

Voltage Supply

3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V

Organization

Memory Cell Array : (128M + 4M) x 8bit

Data Register : (2K + 64) x 8bit

Automatic Program and Erase

Page Program : (2K + 64)Byte

Block Erase : (128K + 4K)Byte

Page Read Operation

Page Size : (2K + 64)Byte

Random Read : 25μs(Max.)

Serial Access : 25ns(Min.)

Fast Write Cycle Time

Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

Endurance : TBD Program/Erase Cycles(with 1bit/512Byte ECC)

Data Retention : TBD

Command Driven Operation

Intelligent Copy-Back with internal 1bit/528Byte EDC

Unique ID for Copyright Protection

Package:

K9F1G08U0C-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

 


型号

K9F1G08U0C

制造商

SAMSUNG/三星

封装

TSOP

批次

22+

无铅/环保

无铅/环保