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K9F1G08U0C 原装 NAND FLASH
K9F1G08U0C 原装 NAND FLASH 的技术参数:
容量 |
1G-bit |
工作电压 |
3.3V |
结构 |
(128M + 4M) x 8bit |
封装与引脚 |
TSOP48 |
K9F1G08U0C 原装 NAND FLASH的 概述
The K9F1G08X0C is a 128Mx8bit (1G-bit) NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.
K9F1G08U0C 原装 NAND FLASH 的特征:
Voltage Supply
3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
Organization
Memory Cell Array : (128M + 4M) x 8bit
Data Register : (2K + 64) x 8bit
Automatic Program and Erase
Page Program : (2K + 64)Byte
Block Erase : (128K + 4K)Byte
Page Read Operation
Page Size : (2K + 64)Byte
Random Read : 25μs(Max.)
Serial Access : 25ns(Min.)
Fast Write Cycle Time
Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
Endurance : TBD Program/Erase Cycles(with 1bit/512Byte ECC)
Data Retention : TBD
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package:
K9F1G08U0C-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
K9F1G08U0C
SAMSUNG/三星
TSOP
22+
无铅/环保
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