供应TC58CVG0S3HRAIJ 原装 NAND FLASH

地区:广东 深圳
认证:

深圳市迅丰达电子科技有限公司

金牌会员3年

全部产品 进入商铺

TC58CVG0S3HRAIJ 原装 NAND FLASH

FLASH - NANDSLC) 存储器 IC 1Gb128M x 8SPI 133 MHz 180 μs 8-WSON6x8

 

 TC58CVG0S3HRAIJ 原装 NAND FLASH的技术参数:

容量(bit)

2G

Tech. node (nm)

24

存储器格式

闪存

存储器类型

非易失

外包装

TRAY

Block size (bit)

(128K+4K)×8

I/O (bit)

1,2,4

存储器接口

SPI

RoHS

封装

WSON8

工作电压(伏)

2.7 to 3.6

访问时间

180 μs

时钟频率

133 MHz

温度规格

-40°C ~ 85°C (TA)

 

 TC58CVG0S3HRAIJ 原装 NAND FLASH的描述:

The TC58CVG0S3HRAIJ is a Serial Interface NAND Flash memory for embedded applications which supports the

SPI interface. The TC58CVG0S3HRAIJ is organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device

has a 2112 byte data buffer which allows program and read data to be transferred between the buffer and the memory

cell array in 2112-byte increments. 


The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes:

2112 bytes × 64 pages). The device has the high speed mode for sequential Page Read operation. When high speed

mode is enabled, the average of tR is shortened.

The TC58CVG0S3HRAIJ has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be

corrected. The details of the internal ECC function is shown in 4.15. Internal ECC.

 


型号

TC58CVG0S3HRAIJ

制造商

TOSHIBA /KIOXIA东芝,铠侠

封装

WSON

批次

21+/22+

引脚数

8