供应TC58BVG1S3HTA00 原装 NAND FLASH

TC58BVG1S3HTA00 原装 NAND FLASH

2Gbit BENAND, 3.3V, x8, 24nm, TSOP

 TOSHIBA /KIOXIA东芝，铠侠 BENAND (Built-in ECC SLC NAND)

TC58BVG1S3HTA00 原装 NAND FLASH的技术参数：

TC58BVG1S3HTA00 原装 NAND FLASH的描述：

The TC58BVG1S3HTA00 is a single 3.3V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes ′ 64 pages ′ 2048 blocks.

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes ′ 64 pages).

The TC58BVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

 The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

The TC58BVG1S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.