原装TC58NVG0S3HTAI0 NAND FLASH供应

原装TC58NVG0S3HTAI0 NAND FLASH供应

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

1G BIT (128M ′ 8 BIT) CMOS NAND E2

原装TC58NVG0S3HTAI0 NAND FLASH的技术参数：

制造商  ：  Kioxia

产品种类  ：  NAND闪存

安装风格  ：  SMD/SMT

封装 / 箱体  ：  TSOP-48

存储容量  ：  1 Gbit

接口类型  ：  Parallel

组织  ：  128 M x 8

数据总线宽度  ：  8 bit

电源电压  ：  2.7 V ~  3.6 V

电源电流(max)  ：  30 mA

工作温度  ：  - 40 C ~ + 85 C

封装  ：  Tray

商标  ：  Kioxia America

存储类型  ：  NAND

湿度敏感性  ：  Yes

产品类型  ：  NAND Flash

工厂包装数量  ：  96

Capacity (bit)  ：  1G

Tech. node (nm)  ：  24

Page size (bit)  ：  (2048+128)×8

I/O (bit)  ：  8

原装TC58NVG0S3HTAI0 NAND FLASH的描述： 

The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and

Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes ′ 64 pages ′ 1024 blocks.

The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes ′ 64 pages).

The TC58NVG0S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.