原装供应 TC58NVG0S3ETAI0 闪存

原装供应 TC58NVG0S3ETAI0  闪存

东芝 闪存, 1 Gbyte, 48引脚, 并行接口, TSOP封装, 表面贴装安装

闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

1 GBIT (128M × 8 BIT) CMOS NAND E2 PROM

原装供应 TC58NVG0S3ETAI0  闪存 的技术参数：

存储器大小  ：  1 Gbyte

接口类型  ：  并行

封装类型  ：  TSOP

引脚数目  ：  48

组织  ：  128M x 8

安装类型  ：  表面贴装

单元类型  ：  NAND

原装供应 TC58NVG0S3ETAI0  闪存 的描述：

The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).