原装 H5TC4G63EFR-RDA LPDDR3

原装 H5TC4G63EFR-RDA LPDDR3

DRAM Chip DDR3L SDRAM 4G-Bit 256M x 16 1.35V 96-Pin FBGA

原装 H5TC4G63EFR-RDA LPDDR3的技术属性：

脚位/封装 FBGA-96

外包装 TRAY

无铅/环保 无铅/环保

电压(伏) 1.35v

温度规格 0°C~+85°C

速度 933 MHZ

Operating Temperature    commercial temperature(0°C~85°C) & 1.35 VDD power

Package Material lead & halogen free(ROHS compliant)

Hynix Memory    H

Die Generation 6th

No Of Banks 8 banks

Product Family DRAM

原装 H5TC4G63EFR-RDA LPDDR3的描述：

Description The H5TC4G63EFR-xxA a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) SK hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.