原装K4A4G165WE-BCRC DRAM动态随机存储器

原装K4A4G165WE-BCRC DRAM动态随机存储器

4Gb E-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)

制造商 SAMSUNG

容量 4 Gb

框架 256M x 16

速度 2400 Mbps

温度 0 ~ 85 °C

Maximum Operating Temperature (°C) 95

Supplier Temperature Grade Commercial

Number of I/O Lines (bit) 16

Supplier Package FBGA

Pin Count 96

Standard Package Name BGA

Mounting Surface Mount

Package Length 13.3

Package Width 7.5

PCB changed 96

Lead Shape Ball

DRAM Type DDR4 SDRAM

Chip Density (bit) 4G

Organization 256Mx16

Number of Internal Banks 8

Number of Words per Bank 32M

Number of Bits/Word (bit) 16

Data Bus Width (bit) 16

Maximum Clock Rate (MHz) 2400

Maximum Access Time (ns) 0.175

Address Bus Width (bit) 20