原装K4A8G165WB-BCTD DDR4 存储器芯片

原装K4A8G165WB-BCTD DDR4 存储器芯片

8Gb B-die DDR4 SDRAM x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 

原装K4A8G165WB-BCTD DDR4 存储器芯片的技术参数：

Density8 Gb

Org.512M x 16

Speed2666 Mbps

Voltage1.2 V

Temp.0 ~ 85°C

Package96FBGA

DRAM Type   DDR4 SDRAM

Chip Density (bit)    8G

Organization   512Mx16

Number of Internal Banks    8

Number of Words per Bank   64M

Number of Bits/Word (bit)       16

Data Bus Width (bit)          16

Maximum Clock Rate (MHz)       2666

Maximum Access Time (ns)       0.17

Address Bus Width (bit)       18

Interface Type          POD

原装K4A8G165WB-BCTD DDR4 存储器芯片 的描述：

8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85°C 96FBGA Mass Production

The 8Gb DDR4 SDRAM B-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.