原装K4E6E304EC-EGCG LPDDR3

K4E6E304EC-EGCG  LPDDR3 三代低功耗双倍数据率同步动态随机存储器

原装K4E6E304EC-EGCG  LPDDR3 的技术参数：

温度规格    -     -25°C~+85°C

速度    -    1066 MHZ

电压(伏)    -    1.2V

ECCN (US)-    EAR99

Part Status-    Active

无铅/环保-    无铅/环保

HTS        -    8542.32.00.36

原装K4E6E304EC-EGCG  LPDDR3 的 关键特性：

• Double-data rate architecture; two data transfers per clock cycle

• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver

• Differential clock inputs (CK_t and CK_c)

• Differential data strobes (DQS_t and DQS_c)

• Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS

• 8 internal banks for concurrent operation

• Data mask (DM) for write data

• Burst Length: 8

• Burst Type: Sequential

• Read & Write latency : Refer to Table 45 LPDDR3 AC Timing Table

• Auto Precharge option for each burst access

• Configurable Drive Strength

• All Bank Refresh, Per Bank Refresh and Self Refresh

• Partial Array Self Refresh and Temperature Compensated Self Refresh

• Write Leveling

• CA Calibration

• HSUL_12 compatible inputs

• VDD1/VDD2/VDDQ/VDDCA

: 1.8V/1.2V/1.2V / 1.2V

• No DLL : CK to DQS is not synchronized

• Edge aligned data output, center aligned data input

• Operating Temperature : -25 ~ 85°C

• On Die Termination using ODT pin\

• 2/CS, 2CKE

K4E6E304EC-EGCG  LPDDR3

K4E6E304EC-EGCG  LPDDR3

16G DDP = 256M x 32 (32M x 32 x 8 banks) + 256M x 32 (32M x 32 x 8 banks)

178FBGA, 11x11.5

原装K4E6E304EC-EGCG  LPDDR3 的技术参数：

脚位/封装   FBGA-178

无铅/环保   无铅/环保

电压(伏)  1.2V

温度规格   -25°C~+85°C

速度   1066 MHZ