供应NT5CB128M16JR-FL LPDDR3 原装

NT5CB128M16JR-FL LPDDR3 原装

Commercial and Industrial DDR3(L) 2Gb SDRAM

NT5CB128M16JR-FL LPDDR3 原装的技术参数：

NT5CB128M16JR-FL LPDDR3 原装的描述：

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK  falling).

All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.