存储器芯片H5TQ4G63CFR-RDC DDR3 4G

全新原装H5TQ4G63CFR-RDC  存储器芯片  DDR3  4G

 存储器芯片H5TQ4G63CFR-RDC  DDR3  4G 的技术参数：

Reach Compliance Code - compliant

包装 - Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube

RoHs Status - Lead free/RoHS Compliant

安装方式 - Surface Mount

工作温度 - 0℃ ~ 95℃

产品生命周期 - End of Life

H5TQ4G63CFR-RDC  存储器芯片  DDR3  4G

 存储器芯片H5TQ4G63CFR-RDC  DDR3  4G 的描述：

The H5TQ4G83CFR-xxC,H5TQ4G63CFR-xxC, H5TQ4G83CFR-xxI, H5TQ4G63CFR-xxI, H5TQ4G83CFR-xxL, H5TQ4G63CFR-xxL,H5TQ4G83CFR-xxJ and H5TQ4G63CFR-xxJ are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires largememory density and high bandwidth. 

SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. 

The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth

H5TQ4G63CFR-RDC DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.5V 96-Pin F-BGA