K4B2G0846F-BCMA 全新原装 DDR3

K4B2G0846F-BCMA 全新原装 DDR3

1. JEDEC standard 1.5V ± 0.075V Power Supply?VDDQ = 1.5V ± 0.075V

2.  400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,933MHz fCK for 1866Mb/sec/pin, 1066MHz fCK for 2133Mb/sec/pin

3.  8 Banks

4.   Programmable CAS Latency(posted CAS):  5,6,7,8,9,10,11,13,14

5.  Programmable Additive Latency: 0, CL-2 or CL-1 clock

6.  Programmable CAS Write Latency (CWL) = 5 (DDR3-800),   6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600),9(DDR3-1866) and 10(DDR3-2133)

7.  8-bit pre-fetch

8.  Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]

9.  Bi-directional Differential Data-Strobe

10.  Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

11.  On Die Termination using ODT pin

12.  Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

13.  Asynchronous Reset

14.  Package :   78 balls FBGA - x8

15.  All of Lead-Free products are compliant for RoHS

16.  All of products are Halogen-fre

MT29F64G08CBABAWP固带 10K 23+

KLM8G1GETF-B041 10K 23+

KLMBG2JETD-B041 10K 23+

KLMAG1JETD-B041 10K 23+

K4E6E304EC-EGCG 10K 23+

K4B4G1646E-BCNB 10K 23+

K4F6E3S4HM-MGCJ 10K 23+

K4AAG165WA-BCWE 10K 23+

K4B4G0846E-BCNB 10K 23+

K4UBE3D4AA-MGCL 10K 23+

K4UBE3D4AB-MGCL 10K 23+

K4U6E3S4AA-MGCR 10K 23+

全新原包原装可含税（香港可交）