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100VP沟道功率MOSFET UTC 12P10L
9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10
uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON),
low gate charge andoperation with low gate voltages. This device is
100VP沟道功率MOSFET UTC 12P10L
UTC 12P10L
100VP沟道功率MOSFET UTC 12P10L
suitable to beused in low voltage applications such as audio amplifier,
highefficiency switching DC/DC converters, and DC motor control.
FEATURES * RDS(ON) < 0.29Ω @VGS = -10V* Low capacitance*
100VP沟道功率MOSFET UTC 12P10L
Low gate charge* Fast switching capability* Avalanche energy specified
The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge andoperation with low gate voltages. This device is suitable to beused in low voltage applications such as audio amplifier, highefficiency switching DC/DC converters, and DC motor control.
9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge andoperation with low gate voltages. This device is suitable to beused in low voltage applications such as audio amplifier, highefficiency switching DC/DC converters, and DC motor control.
FEATURES * RDS(ON) < 0.29Ω @VGS = -10V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
UTC 12P10L
TO-252 T/R
UTC 台湾 友顺
2019+
RDS(ON) < 0.29Ω @VGS = -10V