供应 100 V N沟道MOSFET 19N10L

供应 100 V N沟道MOSFET 19N10L

9N10Datasheet

100V N-Channel MOSFET

 DESCRIPTION  The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse. They are suited for low voltage

 供应 100 V N沟道MOSFET 19N10L

applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motorcontrol.

供应 100 V N沟道MOSFET 19N10L

 FEATURES * RDS(ON) = 0.1 Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )  * Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness

供应 100 V N沟道MOSFET 19N10L

FEATURES * RDS(ON) = 0.1 Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )  * Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness

100V N-Channel MOSFET

 DESCRIPTION  The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motorcontrol.

 FEATURES * RDS(ON) = 0.1 Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )  * Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness