TMPV7502XBG 车载IC 图像识别处理器

Write/Erase Endurance

Write/Erase endurance failures may occur in a cell, page, or block, and are detected by doing a status read

after either an auto program or auto block erase operation. The cumulative bad block count will increase

along with the number of write/erase cycles.

Write/Erase

Cycle

[Cycles]

Cumulative Block

Failure Rate

[%]

50,000  Less than 0.04

•  Data Retention

The data in memory may change after a certain amount of storage time. This is due to charge loss or charge

gain. After block erasure and reprogramming, the block may become usable again.

Here are the combined characteristics of Write/Erase Endurance and Data Retention.

Write/Erase

Cycles

[Cycles]

Estimated Data

Retention

[Years]

Initial

(less than 100)

10

5,000  10

10,000  5

50,000  1

(Note) Conditions for estimated data retention :

- Vdd = 1.8V , Ta = 40℃, 8 bit ECC for 512 bytes

- For BENAND TM 8 bit ECC for 512 bytes is executed internally.

- Cumulative failure rate : max 1,000 ppm

- The 1,000 ppm above is the device failure rate when one or more 512 byte areas become

uncorrectable.