DATA SHEET
DESCRIPTION
The 2SK2488 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.
FEATURES
Low on-state resistance
RDS (on) = 1.2 MAX. (VGS = 10 V, ID = 5.0 A)
Low input capacitance
Ciss = 2 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V)
VDSS
900
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse)
±20
A
Total Power Dissipation (Tc = 25 C)
PT1
150
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
294
mJ
*
PW ≤ 10 s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25 , VGS = 20 V →
