新洁能NCE6050KA N通道增强型功率MOSFET

深圳黄金树科技有限公司代理美国福斯特FIRST，无锡新洁能股份有限公司NCEPOWER功率产品，江苏捷捷微JJM可控硅 等二三极，肖特基 LOWVF值电子元件器 本公司长期有库存 ，无锡新洁能股份有限公司NCE6050KA,原装正品，欢迎来电咨询合作

NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Device Marking Device Device Package Reel Size Tape width Quantity NCE6050KA NCE6050KA TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 50 A Drain Current-Continuous(TC=100℃) ID (100℃) 35.4 A Pulsed Drain Current IDM 200 A Maximum Power Dissipation PD 85 W Derating factor 0.57 W/℃ Single pulse avalanche energy (Note 5) EAS 300 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.4 1.9 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 14 20 mΩ Forward Transconductance gFS VDS=5V,ID=20A 18 - - S