PSMN2R0-30YL N沟道增强型场效应晶体管

PSMN2R0-30YL产品概述

逻辑电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。

该产品仅设计适合用于工业和通信应用。

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

PSMN2R0-30YL产品特性和优势

低开关和导通损耗，因而效率高

适用于逻辑电平栅极驱动源

„ High efficiency due to low switching

and conduction losses

„ Suitable for logic level gate drive

sources

PSMN2R0-30YL产品应用程序

D级放大器

DC-DC转换器

马达控制

服务器电源

„ Class-D amplifiers

„ DC-to-DC converters

„ Motor control

„ Server power supplies