FQP4P40 MOSFET 400V

FQP4P40概述

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

该P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。

FQP4P40这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。

这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

FQP4P40特点

• -3.5 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, ID = -1.75 A

• Low Gate Charge (Typ. 18 nC)

• Low Crss (Typ. 11 pF)

• 100% Avalanche Tested

-3.5 A、-400 V、RDS(on) = 3.1Ω（最大值），需 VGS = -10 V、ID = -1.75 A栅极电荷低（典型值：18nC)

低 Crss（典型值11pF)

100% 经过雪崩击穿测试