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深圳市斌腾达科技有限公司
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制造商:ON Semiconductor产品种类:MOSFETRoHS: 详细信息 技术:Si安装风格:SMD/SMT封装 / 箱体:TO-252-3通道数量:1 Channel晶体管极性:N-ChannelVds-漏源极击穿电压:60 VId-连续漏极电流:7.1 ARds On-漏源导通电阻:19 mOhmsVgs - 栅极-源极电压:20 V最小工作温度:- 55 C最大工作温度:+ 175 CPd-功率耗散:75 W配置:Single通道模式:Enhancement资格:AEC-Q101封装:Cut Tape封装:MouseReel封装:Reel高度:2.39 mm 长度:6.73 mm 系列:FDD24AN06L_F085 晶体管类型:1 N-Channel 宽度:6.22 mm 商标:ON Semiconductor / Fairchild 下降时间:41 ns 产品类型:MOSFET 上升时间:118 ns 工厂包装数量:2500 子类别:MOSFETs 典型关闭延迟时间:26 ns 典型接通延迟时间:12 ns 零件号别名:FDD24AN06LA0_F085 单位重量:260.370 mg
自日本对韩国进行半导体材料出口限制之后,三星作为韩国半导体龙头,成为受冲击最大企业,目前日本政府对韩国实行出口管制的对象主要包括氟聚酰亚胺、光刻胶及蚀刻气体(氟化氢)这3类半导体材料。韩国半导体厂也是正挤破脑袋寻求替代货源,有消息人士透露,三星现已开始测试可能来自西安和台湾的氟化氢产品。
据报道,三星关系人士透露,三星已在用来测试新材料的产线上投入日本以外厂商的氟化氢进行质量性能的测试。该关系人士虽未透露三星进行测试的氟化氢厂商名称,但据猜测应该是来自中国的厂商。
由理韩国国际贸易协会(KITA)的数据显示,以美元计算贸易量,今年1月至5月,韩国进口的用于半导体生产的氟化氢中, 43.9%来自日本,46.3%来自中国大陆。而从日本进口的用于半导体生产的氟化氢一度占到进口量的90%多,2015年起降至50%以下。
韩国半导体界相关人士指出,三星目前是向日本Stella Chemifa、森田化学工业和昭和电工采购高纯度氟化氢。要生产最前端的半导体就必须使用纯度达99.999%的氟化氢,而高纯度氟化氢技术日厂占据了绝对领先地位,因此三星此次测试非日本制产品后能否实际进行采用仍然是未知数。
随着日本政府限制向韩国出口半导体材料,内存芯片的国际现货价格正在快速反弹。根据市场研究公司DRAMeXchange的数据,DRAM现货价格在上周和本周均有所上涨,而NAND闪存价格在上个月末开始逐渐上涨。PC DRAM(DDR4 8Gb)价格从7月11日到15日,上涨了11.8%,而DDR3 4Gb上涨率为13.7%。同期NAND闪存(64Gb MLC)价格上涨3.6%。
“日本对韩国的出口限制导致NAND闪存市场需求快速复苏,”Kiwoom证券解释说,“3D NAND价格已接近其下限,并且由于东芝的停电问题和出口限制可能会进一步刺激它们导致库存迅速减少,这种情况下,客户希望能购买更多内存产品。”
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TO-236AB
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SOT-23
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2V7002WT1G
ON Semiconductor
12000
SC-70-3(SOT323)
BSN20Q-7
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DMN10H700S-7
Diodes Incorporated
9000
SOT-23
2N7002TQ-7-F
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TO-236(SOT-23)
DMN6069SE-13
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2500
SOT-223
SQ2351ES-T1_GE3
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15000
SOT-23-3(TO-236)
SQ2308CES-T1_GE3
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PG-TO252-3-313
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PowerPAK® 1212-8
NVD5C684NLT4G
ON Semiconductor
2500
DPAK
TSM160P04LCRHRLG
Taiwan Semiconductor Corporation
7500
8-PDFN(5x6)
EPC2203
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7500
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DMPH6050SFGQ-7
Diodes Incorporated
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PowerDI3333-8
IPZ40N04S5L4R8ATMA1
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TO-263(D2Pak)
SQM120N10-3M8_GE3
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TO-263(D2Pak)
AUIRF4905STRL
Infineon Technologies
800
D2PAK(TO-263AB)
STB45N40DM2AG
STMicroelectronics
3000
D2PAK
FDB075N15A-F085
ON Semiconductor
1600
D2PAK(TO-263)
FDB3632-F085
ON Semiconductor
800
TO-263AB
AUIRF7749L2TR
Infineon Technologies
4000
DIRECTFET L8
STP45N60DM2AG
STMicroelectronics
299
TO-220
IPW65R110CFDAFKSA1
Infineon Technologies
400
PG-TO247-3
STW65N65DM2AG
STMicroelectronics
473
TO-247
STW58N65DM2AG
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597
TO-247
NVHL080N120SC1
ON Semiconductor
211
TO-247-3
TP65H035WSQA
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DMT3006LFG-7
Diodes Incorporated
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SQD25N15-52_GE3
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I2PAK
SQP90142E_GE3
Vishay Siliconix
1092
TO-220AB
STP265N6F6AG
STMicroelectronics
948
TO-220
STB36NM60ND
STMicroelectronics
1000
D2PAK
AUIRLS8409-7P
Infineon Technologies
1000
D2PAK(7-Lead)
STW45N60DM2AG
STMicroelectronics
600
TO-247
STW62N65M5
STMicroelectronics
603
TO-247
BUK7277-55A,118
Nexperia USA Inc.
7500
DPAK
BUK9M43-100EX
Nexperia USA Inc.
1500
LFPAK33
BUK9M15-60EX
Nexperia USA Inc.
1500
LFPAK33
BUK7225-55A,118
Nexperia USA Inc.
5000
DPAK
DMNH6021SK3Q-13
Diodes Incorporated
2500
TO-252-4L
BUK6226-75C,118
Nexperia USA Inc.
7500
DPAK
SQJA88EP-T1_GE3
Vishay Siliconix
3000
PowerPAK® SO-8
BUK7219-55A,118
Nexperia USA Inc.
10000
DPAK
DMNH6042SPDQ-13
Diodes Incorporated
2500
PowerDI5060-8
BUK9Y07-30B,115
Nexperia USA Inc.
1500
LFPAK56,Power-SO8
BUK7Y28-75B,115
Nexperia USA Inc.
1500
LFPAK56,Power-SO8
BUK626R2-40C,118
Nexperia USA Inc.
5000
DPAK
STL66N3LLH5
STMicroelectronics
3000
PowerFlat™(5x6)
BUK7212-55B,118
Nexperia USA Inc.
2500
DPAK
BUK9675-55A,118
Nexperia USA Inc.
6400
D2PAK
DMNH6012LK3Q-13
Diodes Incorporated
2500
TO-252-4L
DMTH6005LK3Q-13
Diodes Incorporated
2500
TO-252-4L
BUK96180-100A,118
Nexperia USA Inc.
8800
D2PAK
BUK7660-100A,118
Nexperia USA Inc.
2400
D2PAK
BUK9629-100B,118
Nexperia USA Inc.
6400
D2PAK
BUK9609-40B,118
Nexperia USA Inc.
4000
D2PAK
DMNH6008SPSQ-13
Diodes Incorporated
2500
PowerDI5060-8
SQD40030E_GE3
Vishay Siliconix
2000
TO-252AA
BUK7635-100A,118
Nexperia USA Inc.
4000
D2PAK
BUK969R0-60E,118
Nexperia USA Inc.
3200
D2PAK
BUK7611-55A,118
Nexperia USA Inc.
4000
D2PAK
STD80N4F6
STMicroelectronics
2500
DPAK
FDD24AN06LA0-F085
ON(安森美)
252
无铅环保型
贴片式
盒带编带包装
大功率
18+
56592
全新原装 大量库存现货
TO-252-3
60V
7.1A
19 mOhms
2500