FQPF10N60CF FAIRCHILD场效应管仙童MOS管

FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,

electronic lamp ballasts based on half bridge topology.

型号/规格

FQPF10N60CF

品牌/商标

FAIRCHILD（飞兆）

封装形式

TO-220

环保类别

无铅环保型

安装方式

直插式

包装方式

盒带编带包装

功率特征

大功率

FQPF10N60CF FAIRCHILD场效应管 仙童MOS管

FQPF10N60CF FAIRCHILD场效应管仙童MOS管